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Visible-wavelength semiconductor lasers and arrays

Patent ·
OSTI ID:870607
 [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5557627
OSTI ID:
870607
Country of Publication:
United States
Language:
English

References (4)

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes journal December 1994
Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays journal December 1994
High efficiency AlGaInP-based 660–680 nm vertical-cavity surface emitting lasers journal February 1995
Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes journal November 1994

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