Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes

Journal Article · Mon Aug 16 00:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109844· OSTI ID:6038290

Schneider, Jr, R P; Lott, J A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

A novel optical cavity design for improved electrical injection in visible vertical-cavity surface-emitting laser (VCSEL) diodes employing an InGaP/InAlGaP strained quantum-well active optical cavity and AlAs/Al[sub 0.5]Ga[sub 0.5]As distributed Bragg reflectors (DBRs) is described. The cavity design was determined by measuring the lasing threshold current density of visible edge-emitting laser diodes with AlAs/Al[sub 0.5]Ga[sub 0.5]As DBR cladding layers. By inserting InAlP spacer layers between the active region and the DBR cladding, significant improvement in the performance of the edge-emitting lasers was achieved. This approach was then applied to the design of visible VCSEL diodes, and resulted in the first demonstration of room-temperature electrically injected lasing, over the wavelength range 639--661 nm. The visible VCSELs, with a diameter of 20 [mu]m, exhibit pulsed output power of 3.4 mW at 650 nm, and continue to lase at a duty cycle of 40%. The threshold current was 30 mA, with a low threshold voltage (2.7 V) and low series resistance ([lt]15 [Omega]).

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6038290
• Journal Information: Applied Physics Letters; (United States), Vol. 63:7; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LASER CAVITIES
ALUMINIUM ARSENIDES
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
THRESHOLD CURRENT
VISIBLE SPECTRA
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SPECTRA
426002* - Engineering- Lasers & Masers- (1990-)