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Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112972· OSTI ID:7036990
; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0350 (United States)
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7036990
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:2; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English