InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance

Conference · Sun Jun 01 04:00:00 EDT 1997

OSTI ID:486174

Crawford, M H; Choquette, K D; Hickman, R J; Geib, K M

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 486174
• Report Number(s): SAND--97-0243C; CONF-970572--1; ON: DE97007599
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM PHOSPHIDES
FABRICATION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
LASER MATERIALS
PERFORMANCE
SEMICONDUCTOR LASERS