Effects of layer thickness variations on vertical-cavity surface-emitting DBR semiconductor lasers

Journal Article · Wed Feb 28 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.50875· OSTI ID:6972727

Weber, J P; Malloy, K; Wang, S ^[1]

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1. California Univ., Berkeley, CA (USA). Dept. of Electrical Engineering and Computer Sciences

The authors present a theoretical analysis of the influence of layer thickness variation in vertical-cavity surface-emitting lasers with distributed Bragg reflectors (DBR) on lasing wavelength. They show that changing the active region length or one of the layers in the DBR mirror by only one unit cell (0.56 nm) is sufficient to produce shifts in the lasing wavelength up to 0.12 nm (for an AlGaAs laser). This could limit the precision with which we can obtain a desired wavelength, its reproducibility, and its uniformity across a large wafer. They also discuss possible influences on the linewidth of broad area devices.

• OSTI ID: 6972727
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:3; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
DESIGN
DIMENSIONS
LASER CAVITIES
LASERS
LAYERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THICKNESS
VARIATIONS
WAVELENGTHS