Visible-wavelength semiconductor lasers and arrays
The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.
- Research Organization:
- Sandia Corporation
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,557,627/A/
- Application Number:
- PAN: 8-444,462
- OSTI ID:
- 372597
- Country of Publication:
- United States
- Language:
- English
Similar Records
Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes
InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance