Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

Patent · Tue Aug 04 00:00:00 EDT 1987

OSTI ID:866326

Devaney, Walter E ^[1]

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1. Seattle, WA

Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

• Research Organization: Solar Energy Research Institute
• DOE Contract Number: ZL-4-04068-1
• Assignee: Boeing Company (Seattle, WA)
• Patent Number(s): US 4684761
• Application Number: 06/850,461
• OSTI ID: 866326
• Country of Publication: United States
• Language: English

Related Subjects

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i-iii-vi
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efficiencies
simultaneous
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process
mickelsen
chen
closer
control
rates
substrate
temperature
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near
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bulk
junction
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substrate temperature
reactive evaporation
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rate temperature
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