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Title: Method for making graded I-III-VI/sub 2/ semiconductors and solar cell obtained thereby

Patent ·
OSTI ID:6149941

A solar cell is described having a conversion efficiency of at least about 10.4% AMO, comprising: (a) a substrate; (b) a base contact on the substrate; (c) a polycrystalline, thin film CuInSe/sub 2/ semiconductor deposited on the contact and including a near-contact region rich in selenium, a p-type bulk region, and a near-junction region defining a p-n type transient homojunction in the semiconductor; (d) a (Zn/sub 0.2/Cd/sub 0.8/)S thin film deposited atop the CuInse/sub 2/ semiconductor to define a heterojunction, the film including sufficient indium doping in the region away from the heterojunction to provide a sheet resistance of the film of between about 20-25 ohm/square; (e) aluminium grid metalization atop the (Zn/sub 0.2/Cd/sub 0.8/)S thin film, the metalization sufficiently thick to eliminate grid resistance losses; (f) a SiO/sub x/ antireflection coating atop the (Zn/sub 0.2/Cd/sub 0.8/)S thin film and metalization, the SiO/sub x/ having an optical index of refraction of about 1.73; and (g) a MgF/sub 2/ antireflection coating atop the SiO/sub x/.

Assignee:
Boeing Co., Seattle, WA
Patent Number(s):
US 4684761
OSTI ID:
6149941
Resource Relation:
Patent File Date: Filed date 9 Apr 1986
Country of Publication:
United States
Language:
English