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Polycrystalline thin-film CuInSe/sub 2/ solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5449533

The fabrication and properties of polycrystalling, CuInSe/sub 2/ thin-film solar cells based upon a heterojunction device structure of P-type CuInSe/sub 2/ and N-type CdS or mixed Zn/SUB x/ Cd/sub 1/-/SUB x/S are described. General characteristics of the CuInSe/sub 2/ cells under simulated AM1 illumination are presented showing exceptionally high photocurrents (>35mA/cm/sup 2/), low open circuit voltages (about 400mV), and high quantum yields (>0.8) in the spectral range from 600nm to 900nm. Use of a mixed Zn/SUB x/ Cd/sub 1/-/SUB x/S layer is reported to increase the open circuit voltage and has resulted in a conversion efficiency of 10.6%. The thin-film cells have been life tested in open laboratory environment at elevated temperatures for 9300 hours and results are presented which demonstrate excellent resistance to degradation.

Research Organization:
Boeing Aerospace Company, Seattle, WA
OSTI ID:
5449533
Report Number(s):
CONF-820906-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English