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U.S. Department of Energy
Office of Scientific and Technical Information

Progress in polycrystalline thin-film photovoltaic-device research

Conference ·
OSTI ID:7012262

Recent results from the United States Department of Energy (DOE) Thin-Film Photovoltaic Device Program are presented. The program encompasses materials and device research on highly absorbing compound semiconductors including CuInSe/sub 2/, CdTe, Cu/sub 2-x/Se, Zn/sub 3/P/sub 2/, ZnSiAs/sub 2/, and Cu/sub 2/S. Excitement in the program has been generated by recent progress in the (Cd,Zn)S/CuInSe/sub 2/ device area where an efficiency of 10.6% on a 5 ..mu..m thick device has been reported. Other highlights include deposition of a hybrid CdS/Cu/sub 2/S device (evaporated CdS, sputtered Cu/sub 2/S) with a 7.1% AM1 efficiency, and of a 3.94% AM1 efficiency all-sputtered CdS/Cu/sub 2/S cell. AM1 efficiencies exceeding 5% are reported for CdTe Schottky barrier and heterojunction devices, and for a CdS/Cu/sub 2-x/Se heterojunction. AM1 efficiencies exceeding 4% are reported for Mg/Zn/sub 3/P/sub 2/ Schottky barrier cells. Future research emphasis is outlined.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
7012262
Report Number(s):
SERI/TP-211-1716; CONF-820906-15; ON: DE83001232
Country of Publication:
United States
Language:
English