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Transit time studies of junction location in thin-film solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.95872· OSTI ID:6042834
;

The active junction in Cd(Zn)S/CuInSe/sub 2/ thin-film solar cells was investigated by a pulse photoconductivity technique. We observed the diffusion transit time of minority carriers to a homojunction internal to the CuInSe/sub 2/. No electrical activity at the heterojunction was indicated.

Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6042834
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:9; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM SULFIDE SOLAR CELLS
CHARGED-PARTICLE TRANSPORT
COPPER SELENIDE SOLAR CELLS
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
FILMS
HETEROJUNCTIONS
INDIUM SELENIDE SOLAR CELLS
JUNCTIONS
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS