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U.S. Department of Energy
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Ternary compound thin film solar cells. Quarterly report No. 2, 1 Dec 1975--29 Feb 1976

Technical Report ·
OSTI ID:7311448

The further characterization of the CuInX/sup 2/ (X=S, Se, Te) is presented in this report. Specifically, photoconductivity effects in these chalcopyrite thin films are examined. Two areas of investigation are reported: (1) Photoconductivity Spectra, which gives an indication of the spectral response of the films. These data are used to experimentally determine the temperature dependence of the energy gaps for CuInS/sup 2/, CuInSe/sup 2/ and CuInTe/sup 2/ films. And, (2) Photoconductive Response, which gives some indication of the photovoltaic sensitivity of the materials and a measure of the effective carrier lifetimes. The characteristics of several thin film devices are reported. These include: (1) CuInSe/sup 2//CdS Heterojunction. The device parameters are presented. Two methods of device fabrication are discussed: (i) In-situ and (ii) Etched Junction. (/sup 2/) CuInS/sup 2/ Homojunction. The initial diode characteristics are presented for devices produced by two different methods: (i) In-situ and (ii) Sulfurization. Several other devices are discussed. Finally, the techniques used to produce single phase CuInS2 source material are presented.

Research Organization:
Maine Univ., Orono (USA). Dept. of Electrical Engineering
OSTI ID:
7311448
Report Number(s):
PB-253344; NSF/RANN/SE/AER-75-19576/PR/75/2
Country of Publication:
United States
Language:
English