Ternary compound thin film solar cells. Quarterly report No. 2, 1 Dec 1975--29 Feb 1976
The further characterization of the CuInX/sup 2/ (X=S, Se, Te) is presented in this report. Specifically, photoconductivity effects in these chalcopyrite thin films are examined. Two areas of investigation are reported: (1) Photoconductivity Spectra, which gives an indication of the spectral response of the films. These data are used to experimentally determine the temperature dependence of the energy gaps for CuInS/sup 2/, CuInSe/sup 2/ and CuInTe/sup 2/ films. And, (2) Photoconductive Response, which gives some indication of the photovoltaic sensitivity of the materials and a measure of the effective carrier lifetimes. The characteristics of several thin film devices are reported. These include: (1) CuInSe/sup 2//CdS Heterojunction. The device parameters are presented. Two methods of device fabrication are discussed: (i) In-situ and (ii) Etched Junction. (/sup 2/) CuInS/sup 2/ Homojunction. The initial diode characteristics are presented for devices produced by two different methods: (i) In-situ and (ii) Sulfurization. Several other devices are discussed. Finally, the techniques used to produce single phase CuInS2 source material are presented.
- Research Organization:
- Maine Univ., Orono (USA). Dept. of Electrical Engineering
- OSTI ID:
- 7311448
- Report Number(s):
- PB-253344; NSF/RANN/SE/AER-75-19576/PR/75/2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
COPPER SULFIDES
COPPER TELLURIDES
DIRECT ENERGY CONVERTERS
FABRICATION
INDIUM COMPOUNDS
INDIUM SELENIDES
INDIUM SULFIDES
INDIUM TELLURIDES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS