Ternary compound thin film solar cells. Quarterly report No. 3, 1 Mar--31 May 76. [CuInSe/sub 2//CdS]

Technical Report · Tue Jun 01 04:00:00 EDT 1976

OSTI ID:7113609

Kazmerski, L L

The status of the CuInSe/sub 2//CdS heterojunction is discussed. An efficiency of 5.7% is reported for a device illuminated through the CdS layer. I-V and spectral response characteristics are presented. The first thin film CuInS/sub 2/ homojunction photovoltaic device is also reported. Device fabrication and characteristics are discussed. The production of an epitaxial thin film CuInS/sub 2/ single crystal Si photovoltaic junction with 4.9% efficiency is reported. Photoconductive properties of the ternary thin films are indicated. The temperature dependences of the energy gaps of CuInS/sub 2/, CuInSe/sub 2/ and CuInTe/sub 2/ thin films are derived from photoconductivity spectral response measurements. Defects in the chalcopyrite crystal structure are discussed. Dislocation properties are indicated for edge, screw and mixed types.

• Research Organization: Maine Univ., Orono (USA). Dept. of Electrical Engineering
• OSTI ID: 7113609
• Report Number(s): PB-256254; NSF/RANN/SE/AER-7519576/PR/75/3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM SULFIDE SOLAR CELLS
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ENERGY GAP
EPITAXY
FABRICATION
INDIUM COMPOUNDS
INDIUM SELENIDES
JUNCTIONS
LINE DEFECTS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS