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U.S. Department of Energy
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Ternary compound thin film solar cells-II. Second quarter report, January 1--March 31, 1977

Technical Report ·
OSTI ID:6814668
The fabrication and performance of several vacuum-deposited thin-film photovoltaic devices using I-III-VI/sub 2/ chalcopyrite semiconductors are presented. The heterojunctions CdS/CuInS/sub 2/ and CdS/CuInSe/sub 2/ are described with measured solar-conversion efficiencies of 3.25 percent and 6.6 percent respectively. Little photovoltaic response is observed in the CdS/CuInTe/sub 2/ heterostructure. The photovoltaic effect in the first n,p CuInS/sub 2/(3.6 percent) and n,p CuInSe/sub 2/ (3.0 percent) thin-film homojunctions is demonstrated. Light and dark J-V characteristics, spectral responses and device parameters (efficiencies, fill-factor, open-circuit voltages, short-circuit currents and dark saturation currents) are reported for all these devices. Finally, the structure and stability of these ternary-based devices are examined, and Auger electron spectroscopy (AES) is utilized to identify possible device degradation mechanisms under various environmental conditions. In the case of the heterojunctions, depth-compositional profiling is used to determine the grain boundary diffusion coefficients of Cd from the CdS in the ternary thin films.
Research Organization:
Maine Univ., Orono (USA). Dept. of Electrical Engineering
OSTI ID:
6814668
Report Number(s):
NSF/AER-75-19576-2
Country of Publication:
United States
Language:
English