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Method for making graded I-III-VI[sub 2] semiconductors and solar cell obtained thereby

Patent ·
OSTI ID:7256463
Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI[sub 2], thin film, semiconductor, such as CuInSe[sub 2]/(Zn,Cd)S or another I-III-VI[sub 2]/II-VI heterojunction. 1 fig.
Assignee:
Boeing Co., Seattle, WA (United States)
Patent Number(s):
A; US 4684761
Application Number:
CNN: ZL-4-04068-1; PPN: US 6-850461
OSTI ID:
7256463
Country of Publication:
United States
Language:
English