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XPS analysis of chemically treated I-III-IV semiconductor surfaces and the relation to II-VI/I-III-VI heterojunction formation

Book ·
OSTI ID:417689
;  [1]; ; ; ;  [2];  [3]
  1. Colorado School of Mines, Golden, CO (United States). Dept. of Physics
  2. National Renewable Energy Lab., Golden, CO (United States)
  3. Univ. of Wisconsin, Stoughton, WI (United States). Synchrotron Radiation Center
Device-grade thin-film CuInSe{sub 2} was subjected to various chemical treatments commonly used in photovoltaic device fabrication to determine the resulting microscopic surface composition/morphology and the effect on II-VI/CuInSe{sub 2} heterojunction formation. HCl (38%), Br-MeOH (<1% Br), (NH{sub 4}){sub 2}S, and NH{sub 4}OH/thiourea solutions were used separately to modify the surface chemistry of the CuInSe{sub 2} polycrystalline films. Scanning electron microscopy was used to evaluate the resultant surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p and Se 3d core lines were used to evaluate the chemistry of the chemically treated surfaces. CdS overlayers were then deposited in steps on these chemically treated surfaces. Photoemission measurements were acquired after each growth to determine the resultant heterojunction valence-band discontinuity between the CdS and the chemically modified CuInSe{sub 2} surface.
Sponsoring Organization:
National Science Foundation, Washington, DC (United States)
OSTI ID:
417689
Report Number(s):
CONF-960401--; ISBN 1-55899-329-0
Country of Publication:
United States
Language:
English