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X-RAY PHOTOEMISSION ANALYSIS OF PASSIVATED Cd(1-x)ZnxTe SURFACES FOR IMPROVED RADIATION DETECTORS

Journal Article · · Materials Letters
OSTI ID:945502
Surface passivation of device-grade CdZnTe was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements after Br-MeOH (2% Br) and KOH/NH{sub 4}F/H{sub 2}O{sub 2} solutions were used to etch and oxidize the surface. High-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for radiation detector devices.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
945502
Report Number(s):
LLNL-JRNL-404009
Journal Information:
Materials Letters, Journal Name: Materials Letters Journal Issue: 2 Vol. 63; ISSN MLETDJ; ISSN 0167-577X
Country of Publication:
United States
Language:
English