SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS

Journal Article · Tue Aug 04 04:00:00 EDT 2009 · Materials Letters

OSTI ID:970665

Nelson, A; Laurence, T; Conway, A; Behymer, E; Sturm, B; Voss, L; Nikolic, R; Payne, S; Mertiri, A; Pabst, G; Mandal, K; Burger, A

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 970665
• Report Number(s): LLNL-JRNL-415734
• Journal Information: Materials Letters, Journal Name: Materials Letters Journal Issue: 3 Vol. 64; ISSN MLETDJ; ISSN 0167-577X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
CHEMISTRY
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
EVALUATION
MODIFICATIONS
PHOTOEMISSION
PHOTOLUMINESCENCE
RADIATION DETECTORS
TRANSPORT