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Title: Hydrogenated Amorphous Silicon Emitter and Back-Surface-Field Contacts for Crystalline Silicon Solar Cells

Conference ·
OSTI ID:860682

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated as emitters and back-surface-field (BSF) contacts to make silicon heterojunction solar cells on p-type crystalline silicon wafers. A common requirement for excellent emitter and BSF quality is minimization of interface recombination. Best results require immediate a Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain record 16.9% and 14.8% efficiencies on p-type planar float-zone (FZ) and Czochralski (CZ) silicon substrates, respectively, with HWCVD a-Si:H(n) emitters and Al-BSF contacts. Initial efforts with p-type HWCVD Si thin films as the BSF have yielded 12.5% efficiency on p type CZ-Si.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
860682
Report Number(s):
NREL/CP-520-37033; TRN: US0504939
Resource Relation:
Related Information: Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)
Country of Publication:
United States
Language:
English