Progress in Silicon Heterojunction Devices by Hot-Wire CVD: Preprint
Conference
·
OSTI ID:15009888
We report on fabrication of silicon heterojunction (SHJ) solar cells based on Al-backed p-type silicon wafers, with hot-wire chemical vapor deposition (HWCVD) hydrogenated amorphous silicon (a-Si:H) emitter layers. The two-layer emitters are comprised of an extremely thin ({approx}5-nm) intrinsic a-Si:H (a-Si:H(i)) layer topped with a slightly thicker phosphorus-doped a Si:H layer (a-Si:H(n)). Open-circuit voltages (V{sub oc}) above 620 mV are routinely achieved with a maximum of over 640 mV, indicating effective passivation of the crystalline silicon (c-Si) surface by the thin a Si:H(i/n) stack. We used real-time spectroscopic ellipsometry (RTSE) as an in-situ diagnostic tool to monitor film thickness and roughness in real-time and to observe silicon crystallinity by further ex-situ data analysis. The deposited films were also examined by high-resolution transmission electron microscopy (HRTEM). Immediate a-Si:H deposition and a flat interface to the c-Si is the key factor in obtaining high V{sub oc}. On commercial p-type B-doped Czochralski silicon (CZ-Si) wafers with a polished surface and 2.1 {Omega}{center_dot}cm resistivity, the best efficiency obtained is 14.8%. Efficiency above 15.7% is achieved on a 1.3 {Omega}{center_dot}cm, p-type B-doped float-zone silicon (FZ-Si) wafer with a chemically polished front surface and a screen-printed Al-BSF.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99GO10337;
- OSTI ID:
- 15009888
- Report Number(s):
- NREL/CP-520-36668
- Resource Type:
- Conference paper/presentation
- Conference Information:
- Prepared for the 14th Workshop on Crystalline Silicon Solar Cells and Materials, Winter Park, CO (US), 08/08/2004--08/11/2004
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALLINE SILICON
DATA ANALYSIS
DEFECT
DEPOSITION
DEVICE PROCESS
EFFICIENCY
ELLIPSOMETRY
FABRICATION
HETEROJUNCTIONS
IMPURITIES
MATERIALS AND PROCESSES
MICROELECTRONICS
MODULE
MONITORS
PASSIVATION
PHOTOVOLTAICS
PV
ROUGHNESS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY - PHOTOVOLTAICS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALLINE SILICON
DATA ANALYSIS
DEFECT
DEPOSITION
DEVICE PROCESS
EFFICIENCY
ELLIPSOMETRY
FABRICATION
HETEROJUNCTIONS
IMPURITIES
MATERIALS AND PROCESSES
MICROELECTRONICS
MODULE
MONITORS
PASSIVATION
PHOTOVOLTAICS
PV
ROUGHNESS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY - PHOTOVOLTAICS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY