17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 882612
- Report Number(s):
- NREL/CP-520-38942
- Country of Publication:
- United States
- Language:
- English
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