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Title: Far-infared laser spectroscopy of two dimensional holes in strained-layer heterostructure and superlattices

Conference ·
OSTI ID:6782184
;  [1]; ; ;  [2]
  1. Princeton Univ., NJ (USA). Dept. of Electrical Engineering
  2. Sandia National Labs., Albuquerque, NM (USA)

We report far-infrared magneto-transmission data at 4.2 K on a series of p-type strained layer Al{sub x}Ga{sub 1 {minus}x}As/In{sub y}Ga{sub 1 {minus}y}As/GaAs quantum well (QW) structure and InAs{sub 0.15}Sb{sub 0.85}/InSb superlattices (SLS). The Al{sub x}Ga{sub 1 {minus}x}As/In{sub y}/Ga{sub 1 {minus}y}As/GaAs QW structure consists of strained In{sub y}Ga{sub 1 {minus}y}As layers of 100 {Angstrom} in thickness and a space layer having thickness (W{sub sp}) ranging from 30 {Angstrom} to 700 {Angstrom}. The InAs{sub 0.85}/InSb SLS was grown on top of a 1.0{mu}m InAs{sub 0.15}Sb{sub 0.95} strain relief buffer layer consisting of alternating layers of 100 {Angstrom} InAs{sub 0.15}Sb {sub 0.85} and 200 {Angstrom} InSb. The detail of the sample structures has been described elsewhere. The two-dimensional (2D) hole density (p{sub 2D}) of the sample is obtained from the period of the Shubnikov-de Hass oscillations in quantum transport measurements made at 4.2 K. The magneto-transimission experiments are performed in magnetic field (B) up to 8.5 T using polarized radiation and the spectrum is displayed as 4 Log{sub 10}(T(B)/T(0)), where T(B) is the transmittance at B.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOD; DOE/DP
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6782184
Report Number(s):
SAND-90-1772C; CONF-901105-15; ON: DE91000027; CNN: 88-0248
Resource Relation:
Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
Country of Publication:
United States
Language:
English