Chlorine reactive ion beam etching of InSb and InAs sub 0. 15 Sb sub 0. 85 /InSb strained-layer superlattices

Journal Article · Sun Jan 20 23:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104664· OSTI ID:6039145

Vawter, G A; Wendt, J R ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (US)

We report the first successful application of Cl{sub 2} reactive ion beam etching (RIBE) to the dry etching of bulk InSb and InAs{sub 0.15}Sb{sub 0.85}/InSb strained-layer superlattices (SLSs). Etching was performed in a load-locked ultrahigh vacuum chamber using an electron cyclotron resonance ion source. Etching rates for InSb and InAs{sub 0.15}Sb{sub 0.85}/InSb SLS with a 500 eV Cl{sub 2} beam at 0.6 mA/cm{sup 2} are 280 and 240 nm/min, respectively, compared to 310 nm/min for GaAs. The sputter yield for Cl{sub 2} RIBE in this antimonide system is double that obtained by Ar ion milling under identical conditions.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6039145
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:3; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ETCHING
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION BEAMS
NATIONAL ORGANIZATIONS
PNICTIDES
SANDIA LABORATORIES
SUPERLATTICES
SURFACE FINISHING
US AEC
US DOE
US ERDA
US ORGANIZATIONS