Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors

Conference · Thu May 01 00:00:00 EDT 1997

OSTI ID:474928

Qian, Y; Zhu, Z H; Lo, Y H ^[1]; Huffaker, D L; Deppe, D G ^[2]; Hou, H Q; Hammons, B E ^[3]; Lin, W; Tu, Y K

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1. Cornell Univ., Ithaca, NY (United States). School of Electrical Engineering
2. Univ. of Texas, Austin, TX (United States)
3. Sandia National Labs., Albuquerque, NM (United States). Dept. of Semiconductor Materials

A 1.3 {micro}m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} and a threshold current of 2 mA have been demonstrated.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 474928
• Report Number(s): SAND-97-0941C; CONF-970515-2; ON: DE97005362; TRN: AHC29711%%98
• Resource Relation: Conference: QELS `97: quantum electronics and laser science conference, Baltimore, MD (United States), 18-23 May 1997; Other Information: PBD: [1997]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
ION IMPLANTATION
LASER MIRRORS
LASER MATERIALS
THRESHOLD CURRENT
DESIGN
FABRICATION
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES