Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates

Journal Article · Mon Oct 15 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104086· OSTI ID:6289143

Wang, Y H; Tai, K; Hsieh, Y F; Chu, S N.G.; Wynn, J D; Cho, A Y ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.

• OSTI ID: 6289143
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:16; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT