Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays

Journal Article · Wed Nov 30 23:00:00 EST 1994 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.392232· OSTI ID:6797233

Lott, J A ^[1]; Schneider, Jr, R P; Kilcoyne, S P; Choquette, K D ^[2]; Malloy, K J ^[3]

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1. Air Force Inst. of Technology, Wright-Patterson AFB, OH (United States). Dept. of Electrical and Computer Engineering
2. Sandia National Labs., Albuquerque, NM (United States). Microelectronics and Photonics Center
3. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

Room temperature continuous wave operation of red ([lambda][sub 0] [approximately] 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 [times] 64 arrays have a pitch of 100 [mu]m with device diameters of 15 [mu]m with device diameters of 15 [mu]m. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operation simultaneously with peak output powers >0.45 mW, threshold current <1.5 mA, and threshold voltages [<=] 2.7 V. The differential quantum efficiencies exceed 10%.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6797233
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 6:12; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

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