Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Journal Article · Sun Dec 10 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102002· OSTI ID:5139629

Tai, K; Fischer, R J; Seabury, C W; Olsson, N A; Huo, T D; Ota, Y; Cho, A Y ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-{mu}m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15-{mu}m-diam size and a {ital T}{sub 0} of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.

• OSTI ID: 5139629
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:24; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CURRENTS
DATA
ELECTRIC CURRENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
LOW TEMPERATURE
MODULATION
NUMERICAL DATA
OPERATION
OSCILLATION MODES
PNICTIDES
POWER
POWER RANGE MILLI W
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
THRESHOLD CURRENT