High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers

Journal Article · Sun Oct 28 23:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104038· OSTI ID:6329927

Tell, B; Lee, Y H; Brown-Goebeler, K F; Jewell, J L ^[1]; Leibenguth, R E; Asom, M T; Livescu, G; Luther, L; Mattera, V D ^[2]

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1. AT T Bell Laboratories, Holmdel, NJ (USA)
2. AT T Bell Laboratories, STC, Breinigsville, PA (USA)

We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 {mu}m. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H{sup +} implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-{mu}m-diam emitting windows, {similar to}4 mA thresholds with continuous-wave (cw) room-temperature output powers {gt}1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.

• OSTI ID: 6329927
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
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