Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region

Journal Article · Tue Jul 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119459· OSTI ID:531700

Qian, Y; Zhu, Z H; Lo, Y H ^[1]; Huffaker, D L; Deppe, D G ^[2]; Hou, H Q; Hammons, B E ^[3]; Lin, W; Tu, Y K ^[4]

---

1. School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853 (United States)
2. Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1084 (United States)
3. Department of Semiconductor Materials, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
4. Telecommunication Laboratories, Chunghwa Telecom Company, Taiwan (China)

We proposed and demonstrated a novel design for long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 {mu}m-VCSELs with a record low cw threshold current density of 1.57kA/cm{sup 2} and a record low cw threshold current of 1 mA have been realized. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 531700
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
DESIGN
FABRICATION
GAIN
GALLIUM ARSENIDES
INDIUM COMPOUNDS
LASER CAVITIES
LASER MIRRORS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT