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Title: Piezoelectric deformable photonic devices

Patent ·
OSTI ID:1987091

A CMOS-compatible actuator platform for implementing phase, amplitude, and frequency modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators is disclosed. The platform, which may be fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic operating temperatures. A number of devices are possible, including ring modulator devices, phase shifter devices, Mach-Zehnder interferometer devices, directional coupler devices (including tunable directional coupler devices), and acousto-optic modulator and frequency shifter devices, each of which can employ the same AlN actuator platform. As all of these devices can be built on the same AlN actuator platform, numerous optical functions can be implemented on a single die.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
11,569,431
Application Number:
16/989,535
OSTI ID:
1987091
Resource Relation:
Patent File Date: 08/10/2020
Country of Publication:
United States
Language:
English

References (20)

Piezoelectric tuning of a suspended silicon nitride ring resonator conference October 2017
Aluminum nitride electro-optic phase shifter for backend integration on silicon journal January 2016
Hybrid polymer/sol–gel waveguide modulators with exceptionally large electro–optic coefficients journal March 2007
Mechanically-Tunable Photonic Devices with On-Chip Integrated MEMS/NEMS Actuators journal April 2016
Optical path length modulator patent May 1994
Effect of precursors on propagation loss for plasma-enhanced chemical vapor deposition of SiN_x:H waveguides journal January 2016
Ultra-low-power stress-optics modulator for microwave photonics conference February 2017
Piezoelectric actuation of silica-on-silicon waveguide devices journal October 1998
Submicron silicon waveguide optical switch driven by microelectromechanical actuator journal March 2008
Operation of high-speed silicon photonic micro-disk modulators at cryogenic temperatures journal January 2017
RF front end module including hybrid filter and active circuits in a single package patent September 2022
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films journal October 2009
Low-Loss, Silicon Integrated, Aluminum Nitride Photonic Circuits and Their Use for Electro-Optic Signal Processing journal June 2012
Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages journal September 2018
Large-scale broadband digital silicon photonic switches with vertical adiabatic couplers journal January 2016
Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits journal June 2016
Large-scale silicon photonic switches with movable directional couplers journal January 2015
Perturbation theory for Maxwell’s equations with shifting material boundaries journal June 2002
Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film journal April 2012
Stress-optic modulator in TriPleX platform using a piezoelectric lead zirconate titanate (PZT) thin film journal January 2015

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