Planar tunneling spectroscopy on van der Waals superconductors with AlOx junction grown by atomic layer deposition

Ji, Yu; Wang, Hao; Dong, Zehao; Ye, Shusen; Li, Qingyang; Gao, Zhiting; Gu, Genda D.; Hao, Zhenqi; Wang, Yayu

doi:10.1063/5.0124947

Title: Planar tunneling spectroscopy on van der Waals superconductors with AlO_x junction grown by atomic layer deposition

Journal Article · Thu Jan 05 00:00:00 EST 2023 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0124947· OSTI ID:1924193

^[1]; Wang, Hao ^[1];

^[1];

^[1]; Li, Qingyang ^[1]; Gao, Zhiting ^[1];

^[2];

^[1];

^[3]

Tsinghua University, Beijing (China)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Tsinghua University, Beijing (China); Frontier Science Center for Quantum Information, Beijing (China); Hefei National Laboratory (China)

Here, we demonstrate a method for fabricating a high-quality AlO_x-based planar tunnel junction using atomic layer deposition, integrated with the exfoliation and transfer techniques for van der Waals (vdW) materials. The tunneling spectroscopy results on exfoliated Bi₂Sr₂CaCu₂O_8+δ and 2H-NbSe₂ vdW superconductors are highly consistent with that obtained by ultrahigh vacuum scanning tunneling spectroscopy on atomically clean surfaces. The planar tunneling devices enable high-precision spectroscopy over a wide range of temperatures and magnetic fields and reveal novel features and stark contrast between high-T_C cuprates and conventional superconductors. This method represents a universally applicable technique for probing the electronic structure of various two-dimensional vdW materials.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Quantum Science and Technology

Grant/Contract Number:: SC0012704; 2021ZD0302502; DOE-sc0012704

OSTI ID:: 1924193

Alternate ID(s):: OSTI ID: 1908030

Report Number(s):: BNL-223997-2023-JAAM; TRN: US2312486

Journal Information:: Journal of Applied Physics, Vol. 133, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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