Transfer-Printing of Tunable Porous Silicon Microcavities with Embedded Emitters

Ning, Hailong; Krueger, Neil A.; Sheng, Xing; Keum, Hohyun; Zhang, Chen; Choquette, Kent D.; Li, Xiuling; Kim, Seok; Rogers, John A.; Braun, Paul V.

doi:10.1021/ph500230j

Title: Transfer-Printing of Tunable Porous Silicon Microcavities with Embedded Emitters

Journal Article · Tue Oct 21 00:00:00 EDT 2014 · ACS Photonics

DOI:https://doi.org/10.1021/ph500230j· OSTI ID:1876582

Ning, Hailong ^[1]; Krueger, Neil A. ^[1]; Sheng, Xing ^[1]; Keum, Hohyun ^[1]; Zhang, Chen ^[1]; Choquette, Kent D. ^[1]; Li, Xiuling ^[1]; Kim, Seok ^[1]; Rogers, John A. ^[1]; Braun, Paul V. ^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States)

Here we demonstrate, via a modified transfer-printing technique, that electrochemically fabricated porous silicon (PSi) distributed Bragg reflectors (DBRs) can serve as the basis of high-quality hybrid microcavities compatible with most forms of photoemitters. Vertical microcavities consisting of an emitter layer sandwiched between 11- and 15-period PSi DBRs were constructed. Furthermore, the emitter layer included a polymer doped with PbS quantum dots, as well as a heterogeneous GaAs thin film. In this structure, the PbS emission was significantly redistributed to a 2.1 nm full-width at half-maximum around 1198 nm, while the PSi/GaAs hybrid microcavity emitted at 902 nm with a sub-nanometer full-width at half-maximum and quality-factor of 1058. Modification of PSi DBRs to include a PSi cavity coupling layer enabled tuning of the total cavity optical thickness. Infiltration of the PSi with Al₂O₃ by atomic layer deposition globally red-shifted the emission peak of PbS quantum dots up to ~18 nm (~0.9 nm per cycle), while introducing a cavity coupling layer with a gradient optical thickness spatially modulated the cavity resonance of the PSi/GaAs hybrid such that there was an ~30 nm spectral variation in the emission of separate GaAs modules printed ~3 mm apart.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: FG02-07ER46471; SC0001293; FG02-07ER46453

OSTI ID:: 1876582

Journal Information:: ACS Photonics, Vol. 1, Issue 11; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 33 works

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Resonant Mode Engineering of Photonic Crystal Sensors Clad with Ultralow Refractive Index Porous Silicon Dioxide Wan, Yuhang; Krueger, Neil A.; Ocier, Christian R. Advanced Optical Materials, Vol. 5, Issue 21 https://doi.org/10.1002/adom.201700605	journal	September 2017
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