Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition
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Condensed-Matter Simulation of a Three-Dimensional Anomaly
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December 1984 |
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
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April 2012 |
Effects of surface recombination on the charge collection in h-BN neutron detectors
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March 2019 |
Optical properties of hexagonal boron nitride
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June 1976 |
A bright future for blue/green LEDs
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May 1995 |
Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons
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March 2017 |
Hexagonal boron nitride for deep ultraviolet photonic devices
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June 2014 |
Boron nitride: A new photonic material
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April 2014 |
Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors
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July 2017 |
High aspect ratio composite structures with 48.5% thermal neutron detection efficiency
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February 2013 |
Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy
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May 2016 |
Defect-related photoluminescence of hexagonal boron nitride
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October 2008 |
A Handheld Neutron-Detection Sensor System Utilizing a New Class of Boron Carbide Diode
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January 2006 |
High efficiency hexagonal boron nitride neutron detectors with 1 cm 2 detection areas
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April 2020 |
Bulk and surface electronic structure of hexagonal boron nitride
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October 1987 |
Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys
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Layer number dependent optical properties of multilayer hexagonal BN epilayers
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February 2017 |
Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal
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May 2009 |
Boron nitride substrates for high-quality graphene electronics
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August 2010 |
Light scattering study of boron nitride microcrystals
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June 1981 |
III-nitride blue and ultraviolet photonic crystal light emitting diodes
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January 2004 |
Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride
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September 2009 |
Band-edge exciton states in AlN single crystals and epitaxial layers
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January 2004 |
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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June 2005 |
Band structure and fundamental optical transitions in wurtzite AlN
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December 2003 |
Excitons in Boron Nitride Nanotubes: Dimensionality Effects
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March 2006 |
Point defects in hexagonal boron nitride. II. Theoretical studies
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March 1975 |
Hexagonal boron nitride is an indirect bandgap semiconductor
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January 2016 |
Temperature Dependence of the Band Gap of Semiconducting Carbon Nanotubes
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January 2005 |
AlN avalanche photodetectors
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December 2007 |
Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride
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September 2017 |
Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride
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May 1997 |
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
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November 2019 |
High-efficiency microstructured semiconductor neutron detectors that are arrayed, dual-integrated, and stacked
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July 2012 |
Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE
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November 2008 |
The Blue Laser Diode. The Complete Story
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May 2001 |
Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
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February 2007 |
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
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July 2005 |
Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride
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March 2018 |
Hexagonal boron nitride neutron detectors with high detection efficiencies
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January 2018 |
High-field effects in photoconducting cadmium sulphide
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March 1965 |
Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors
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July 2016 |
Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B x C y N z Nanotubes
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April 2004 |
Hexagonal boron nitride epitaxial layers as neutron detector materials
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 654, Issue 1
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October 2011 |
Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
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June 2012 |
Band offset of GaAs-GaInP heterojunctions
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December 1993 |
Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
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December 2007 |
Graphene based heterostructures
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August 2012 |
Fundamental optical transitions in GaN
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May 1996 |
Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
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November 1992 |
Direct observation of the band structure in bulk hexagonal boron nitride
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February 2017 |
Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications
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September 2016 |
Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
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April 1997 |
Optical and electrical properties of Mg-doped p-type AlxGa1−xN
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February 2002 |
AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics
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May 2017 |
Solid-state neutron detectors based on thickness scalable hexagonal boron nitride
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January 2017 |
Band-edge transitions in hexagonal boron nitride epilayers
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July 2012 |
The rise of graphene
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March 2007 |
Near band-gap photoluminescence properties of hexagonal boron nitride
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May 2008 |
Ab initio study of graphite → diamondlike transitions in BN
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September 1988 |
Origin and roles of oxygen impurities in hexagonal boron nitride epilayers
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April 2018 |
An X-ray study of boron nitride
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May 1952 |
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
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August 2010 |
Correlation between optoelectronic and structural properties and epilayer thickness of AlN
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June 2007 |
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
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August 2003 |
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
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May 2011 |
Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
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February 2012 |
Electronic structure and core exciton of hexagonal boron nitride
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February 1984 |
Sensitivity analysis of electron leakage in III-nitride light-emitting diodes
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April 2013 |
Temperature dependence of the energy gap in semiconductors
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January 1967 |
Stability of native defects in hexagonal and cubic boron nitride
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March 2001 |
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors
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March 1968 |
Comment on “Huge Excitonic Effects in Layered Hexagonal Boron Nitride”
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May 2008 |
Conduction anisotropy in layered semiconductors
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November 1994 |
Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
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April 2006 |
Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 783
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May 2015 |
The origin of deep-level impurity transitions in hexagonal boron nitride
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January 2015 |
GaN: Processing, defects, and devices
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July 1999 |
Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride
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January 1966 |
Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy
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October 2009 |
Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
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April 2008 |
Huge Excitonic Effects in Layered Hexagonal Boron Nitride
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January 2006 |
Realization of highly efficient hexagonal boron nitride neutron detectors
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August 2016 |
Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures
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October 1991 |
Defect and impurity properties of hexagonal boron nitride: A first-principles calculation
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December 2012 |
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
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March 2009 |
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
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January 2018 |
Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE)
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January 2013 |
Two-dimensional excitons in three-dimensional hexagonal boron nitride
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November 2013 |
Assessment of Present and Future Large-Scale Semiconductor Detector Systems
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January 1985 |
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
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October 2012 |
High sensitivity hexagonal boron nitride lateral neutron detectors
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June 2019 |
The origins of near band-edge transitions in hexagonal boron nitride epilayers
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February 2016 |
Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment
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September 1990 |
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
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May 2004 |
Carbon-rich hexagonal (BN)C alloys
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June 2015 |
Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes
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July 2004 |
Dry etching techniques for active devices based on hexagonal boron nitride epilayers
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November 2013 |
Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties
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March 2014 |
Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10?297.5�K temperature range
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September 2002 |
Fascinating journeys into blue light (Nobel Lecture): Fascinating journeys into blue light
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May 2015 |
Hexagonal boron nitride grown by MOVPE
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November 2008 |
Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture): Invention of the efficient blue InGaN LEDs
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April 2015 |
Carbon Wonderland
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April 2008 |
Photoconductivity of AlN films on SiC
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November 2005 |
Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture): Growth of GaN and realization of p-type GaN
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April 2015 |
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
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The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
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August 1978 |
Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
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August 2007 |
Thermally stimulated processes in the luminescence of carbon-related defects for h-BN micropowder
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May 2019 |
Van der Waals heterostructures
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July 2013 |
Coupling of excitons and defect states in boron-nitride nanostructures
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April 2011 |
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
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December 2011 |
Thermal neutron detection with pyrolytic boron nitride
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 591, Issue 3
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July 2008 |
Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors
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March 2007 |
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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May 2006 |
Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy
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September 2016 |
Improved High Efficiency Stacked Microstructured Neutron Detectors Backfilled With Nanoparticle $^{6}$LiF
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February 2012 |
Optical properties of AlN and GaN in elevated temperatures
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October 2004 |
First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer
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May 2012 |
Hexagonal boron nitride and 6H-SiC heterostructures
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May 2013 |
Correlation between optical and electrical properties of Mg-doped AlN epilayers
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October 2006 |
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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February 2012 |
Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
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March 2003 |
Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 748
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June 2014 |
Native point defects and impurities in hexagonal boron nitride
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June 2018 |
Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors
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June 2007 |
Charge carrier transport properties in layer structured hexagonal boron nitride
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October 2014 |
Origin of the significantly enhanced optical transitions in layered boron nitride
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October 2012 |
Die Isotopenh�ufigkeit des Bors. Massenspektrometrische Untersuchung der Elektronensto�produkte von BF3 und BCl3
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June 1950 |
Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 606, Issue 3
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July 2009 |
200nm deep ultraviolet photodetectors based on AlN
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November 2006 |
Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
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February 2005 |
Unique optical properties of AlGaN alloys and related ultraviolet emitters
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June 2004 |
Study of defects in wide band gap semiconductors by electron paramagnetic resonance
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April 1993 |
Defect states of complexes involving a vacancy on the boron site in boronitrene
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Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
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August 2019 |
Structural and electronic properties of h -BN
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September 2003 |
Fine Structure Constant Defines Visual Transparency of Graphene
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June 2008 |