Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors
- Peking Univ., Beijing (China)
- Univ. of Texas, Austin, TX (United States)
- King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
- Peking Univ., Beijing (China); Nankai Univ., Tianjin (China)
The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (εr ~ 22) amorphous native oxide Bi2SeOx on the 2D semiconducting Bi2O2Se using O2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
- Research Organization:
- Univ. of Texas, Austin, TX (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0019025
- OSTI ID:
- 1658862
- Journal Information:
- Nano Letters, Vol. 20, Issue 10; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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