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A native oxide high-κ gate dielectric for two-dimensional electronics

Journal Article · · Nature Electronics
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  1. Peking Univ., Beijing (China); University of Texas at Austin
  2. Peking Univ., Beijing (China)
  3. Weizmann Inst. of Science, Rehovot (Israel)
  4. Univ. of Texas, Austin, TX (United States)
  5. Tsinghua Univ., Beijing (China)
  6. Peking Univ., Beijing (China); Nankai Univ., Tianjin (China)
  7. Peking Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
+ Show Author Affiliations
Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi2O2Se. Using this native oxide dielectric, high-performance Bi2O2Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi2SeO5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi2O2Se semiconductor almost unchanged.
Research Organization:
Univ. of Texas, Austin, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0019025
OSTI ID:
1658820
Journal Information:
Nature Electronics, Journal Name: Nature Electronics Journal Issue: 8 Vol. 3; ISSN 2520-1131
Publisher:
Springer NatureCopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY