Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

Tu, Teng; Zhang, Yichi; Li, Tianran; Yu, Jia; Liu, Lingmei; Wu, Jinxiong; Tan, Congwei; Tang, Jilin; Liang, Yan; Zhang, Congcong; Dai, Yumin; Han, Yu; Lai, Keji; Peng, Hailin

doi:10.1021/acs.nanolett.0c02951

Title: Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

Journal Article · Thu Sep 03 00:00:00 EDT 2020 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.0c02951· OSTI ID:1658862

Tu, Teng ^[1]; Zhang, Yichi ^[1]; Li, Tianran ^[1]; Yu, Jia ^[2]; Liu, Lingmei ^[3]; Wu, Jinxiong ^[4]; Tan, Congwei ^[1]; Tang, Jilin ^[1]; Liang, Yan ^[1]; Zhang, Congcong ^[1]; Dai, Yumin ^[1]; Han, Yu ^[3]; Lai, Keji ^[2]; Peng, Hailin ^[1]

Peking Univ., Beijing (China)
Univ. of Texas, Austin, TX (United States)
King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
Peking Univ., Beijing (China); Nankai Univ., Tianjin (China)

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε_r ~ 22) amorphous native oxide Bi₂SeO_x on the 2D semiconducting Bi2O2Se using O₂ plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi₂O₂Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi₂O₂Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

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Research Organization:: Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019025

OSTI ID:: 1658862

Journal Information:: Nano Letters, Vol. 20, Issue 10; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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