High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

doi:10.1038/nnano.2017.43

Title: High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se

Journal Article · Mon Apr 03 00:00:00 EDT 2017 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2017.43· OSTI ID:1348989

Wu, Jinxiong ^[1]; Yuan, Hongtao ^[2]; Meng, Mengmeng ^[3]; Chen, Cheng ^[4]; Sun, Yan ^[5];

^[6]; Dang, Wenhui ^[1]; Tan, Congwei ^[1]; Liu, Yujing ^[1];

^[1]; Zhou, Yubing ^[1];

^[3]; Xu, H. Q. ^[3]; Cui, Yi ^[2]; Hwang, Harold Y. ^[2]; Liu, Zhongfan ^[1]; Chen, Yulin ^[4];

^[5]; Peng, Hailin ^[1]

Peking Univ., Beijing (China). Center for Nanochemistry, Beijing National Lab. for Molecular Sciences (BNLMS)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Peking Univ., Beijing (China). State Key Lab. for the Physics and Chemistry of Nanodevices
Univ. of Oxford (United Kingdom). Dept. of Physics and Clarendon Lab.
Max Planck Inst. for Chemical Physics of Solids, Dresden (Germany); ShanghaiTech Univ. (China). School of Physical Science and Technology
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi₂O₂Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m₀. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi₂O₂Se was found to increase as thinning down to the monolayer due to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm² V^-1 s^-1 was achieved in as-grown Bi₂O₂Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi₂O₂Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm² V^-1 s^-1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi₂O₂Se semiconductor a promising candidate for future high-speed and low-power electronic applications.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1348989

Journal Information:: Nature Nanotechnology, Vol. 12, Issue 3; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 384 works

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References (39)

Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi2O2Te Luu, Son D. N.; Vaqueiro, Paz Journal of Solid State Chemistry, Vol. 226 https://doi.org/10.1016/j.jssc.2015.02.026	journal	March 2015
Experimental observation of the quantum Hall effect and Berry's phase in graphene Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L. Nature, Vol. 438, Issue 7065, p. 201-204 https://doi.org/10.1038/nature04235	journal	November 2005
Liquid Exfoliation of Layered Materials Nicolosi, V.; Chhowalla, M.; Kanatzidis, M. G. Science, Vol. 340, Issue 6139, p. 1226419 https://doi.org/10.1126/science.1226419	journal	June 2013
Mobility overestimation due to gated contacts in organic field-effect transistors Bittle, Emily G.; Basham, James I.; Jackson, Thomas N. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10908	journal	March 2016
Phosphorene excites materials scientists Samuel Reich, Eugenie Nature, Vol. 506, Issue 7486 https://doi.org/10.1038/506019a	journal	February 2014
Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica Li, Hui; Cao, Jie; Zheng, Wenshan Journal of the American Chemical Society, Vol. 134, Issue 14 https://doi.org/10.1021/ja3021395	journal	March 2012
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Topological insulator nanostructures for near-infrared transparent flexible electrodes Peng, Hailin; Dang, Wenhui; Cao, Jie Nature Chemistry, Vol. 4, Issue 4 https://doi.org/10.1038/nchem.1277	journal	February 2012
Graphene transistors Schwierz, Frank Nature Nanotechnology, Vol. 5, Issue 7 https://doi.org/10.1038/nnano.2010.89	journal	May 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Quantum Hall effect in black phosphorus two-dimensional electron system Li, Likai; Yang, Fangyuan; Ye, Guo Jun Nature Nanotechnology, Vol. 11, Issue 7 https://doi.org/10.1038/nnano.2016.42	journal	March 2016
Two-dimensional semiconductors with possible high room temperature mobility Zhang, Wenxu; Huang, Zhishuo; Zhang, Wanli Nano Research, Vol. 7, Issue 12 https://doi.org/10.1007/s12274-014-0532-x	journal	September 2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Measurement of mobility in dual-gated MoS2 transistors Fuhrer, Michael S.; Hone, James Nature Nanotechnology, Vol. 8, Issue 3 https://doi.org/10.1038/nnano.2013.30	journal	March 2013
On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors Uemura, Takafumi; Rolin, Cedric; Ke, Tung-Huei Advanced Materials, Vol. 28, Issue 1 https://doi.org/10.1002/adma.201503133	journal	November 2015
Die Kristallstruktur von Bi2O2Se Boller, H. Monatshefte f�r Chemie, Vol. 104, Issue 4 https://doi.org/10.1007/BF00903904	journal	January 1973
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi $_{2}$ Se $_{3}$ Kim, Yong Seung; Brahlek, Matthew; Bansal, Namrata Physical Review B, Vol. 84, Issue 7 https://doi.org/10.1103/PhysRevB.84.073109	journal	August 2011
Electronics based on two-dimensional materials Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe Nature Nanotechnology, Vol. 9, Issue 10 https://doi.org/10.1038/nnano.2014.207	journal	October 2014
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Ohtomo, A.; Hwang, H. Y. Nature, Vol. 427, Issue 6973 https://doi.org/10.1038/nature02308	journal	January 2004
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele Chemical Society Reviews, Vol. 45, Issue 1 https://doi.org/10.1039/C5CS00517E	journal	January 2016
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential Tran, Fabien; Blaha, Peter Physical Review Letters, Vol. 102, Issue 22 https://doi.org/10.1103/PhysRevLett.102.226401	journal	June 2009
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Li, X.; Cai, W.; An, J. Science, Vol. 324, Issue 5932, p. 1312-1314 https://doi.org/10.1126/science.1171245	journal	May 2009
Environmental instability of few-layer black phosphorus Island, Joshua O.; Steele, Gary A.; Zant, Herre S. J. van der 2D Materials, Vol. 2, Issue 1 https://doi.org/10.1088/2053-1583/2/1/011002	journal	January 2015
Black phosphorus field-effect transistors Li, Likai; Yu, Yijun; Ye, Guo Jun Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.35	journal	March 2014
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Thermal Decomposition of Bismuth Oxysulfide from Photoelectric Bi ₂ O ₂ S to Superconducting Bi ₄ O ₄ S ₃ Zhang, Xian; Liu, Yufeng; Zhang, Ganghua ACS Applied Materials & Interfaces, Vol. 7, Issue 7 https://doi.org/10.1021/am5092159	journal	February 2015
Two-dimensional gas of massless Dirac fermions in graphene Novoselov, K. S.; Geim, A. K.; Morozov, S. V. Nature, Vol. 438, Issue 7065, p. 197-200 https://doi.org/10.1038/nature04233	journal	November 2005
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5475	journal	July 2014
Isospin Pomeranchuk effect in twisted bilayer graphene Saito, Yu; Yang, Fangyuan; Ge, Jingyuan Nature, Vol. 592, Issue 7853 https://doi.org/10.1038/s41586-021-03409-2	journal	April 2021
Measurement of mobility in dual-gated MoS2 transistors Fuhrer, Michael S.; Hone, James arXiv https://doi.org/10.48550/arxiv.1301.4288	text	January 2013
Mobility engineering and metal-insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras arXiv https://doi.org/10.48550/arxiv.1301.4947	text	January 2013
Two dimensional semiconductors with possible high room temperature mobility Zhang, Wenxu; Huang, Zhishuo; Zhang, Wanli arXiv https://doi.org/10.48550/arxiv.1403.3872	text	January 2014
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors Li, Song-Lin; Tsukagoshi, Kazihito; Orgiu, Emanuele arXiv https://doi.org/10.48550/arxiv.1602.03116	text	January 2016
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S.; Geim, A. K.; Morozov, S. V. arXiv https://doi.org/10.48550/arxiv.cond-mat/0410550	text	January 2004
Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L. arXiv https://doi.org/10.48550/arxiv.cond-mat/0509355	text	January 2005

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NbS ₂ : A Promising p -Type Ohmic Contact for Two-Dimensional Materials Ding, Xiang; Zhang, Sa; Zhao, Mei Physical Review Applied, Vol. 12, Issue 6 https://doi.org/10.1103/physrevapplied.12.064061	journal	December 2019
Tunable magnetic order in transition metal doped, layered, and anisotropic $B i_{2} O_{2} Se$ : Competition between exchange interaction mechanisms Liu, Xiaopeng; Legut, Dominik; Zhang, Ruifeng Physical Review B, Vol. 100, Issue 5 https://doi.org/10.1103/physrevb.100.054438	journal	August 2019
Surface electronic structure of bismuth oxychalcogenides Eremeev, S. V.; Koroteev, Y. M.; Chulkov, E. V. Physical Review B, Vol. 100, Issue 11 https://doi.org/10.1103/physrevb.100.115417	journal	September 2019
Nontrivial strength of van der Waals epitaxial interaction in soft perovskites Wang, Yiping; Gao, Lei; Yang, Yunbo Physical Review Materials, Vol. 2, Issue 7 https://doi.org/10.1103/physrevmaterials.2.076002	journal	July 2018
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi ₂ O ₂ Se Chen, Cheng; Wang, Meixiao; Wu, Jinxiong Science Advances, Vol. 4, Issue 9 https://doi.org/10.1126/sciadv.aat8355	journal	September 2018
Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In ₂ Se ₃ for Flexible Broadband Photodetectors Tang, Lei; Teng, Changjiu; Luo, Yuting Research, Vol. 2019 https://doi.org/10.1155/2019/2763704	journal	March 2019
Two-Dimensional Pnictogen for Field-Effect Transistors Zhou, Wenhan; Chen, Jiayi; Bai, Pengxiang Research, Vol. 2019 https://doi.org/10.34133/2019/1046329	journal	October 2019
Elastic Properties of 2D Ultrathin Tungsten Nitride Crystals Grown by Chemical Vapor Deposition Wang, Hong; Sandoz‐Rosado, Emil J.; Tsang, Siu Hon Advanced Functional Materials, Vol. 29, Issue 31 https://doi.org/10.1002/adfm.201902663	journal	June 2019
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi ₂ O ₂ Se Nanosheets Tong, Tong; Chen, Yunfeng; Qin, Shuchao Advanced Functional Materials, Vol. 29, Issue 50 https://doi.org/10.1002/adfm.201905806	journal	September 2019
Seed‐Induced Vertical Growth of 2D Bi ₂ O ₂ Se Nanoplates by Chemical Vapor Transport Wu, Zhen; Liu, Guoliang; Wang, Yuxi Advanced Functional Materials, Vol. 29, Issue 50 https://doi.org/10.1002/adfm.201906639	journal	September 2019
An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide Tian, Xiangling; Luo, Hongyu; Wei, Rongfei Advanced Materials, Vol. 30, Issue 31 https://doi.org/10.1002/adma.201801021	journal	June 2018
Synergistical Enhancement of Thermoelectric Properties in n‐Type Bi ₂ O ₂ Se by Carrier Engineering and Hierarchical Microstructure Tan, Xing; Liu, Yaochun; Liu, Rui Advanced Energy Materials, Vol. 9, Issue 31 https://doi.org/10.1002/aenm.201900354	journal	July 2019
Space‐confined microwave synthesis of ternary‐layered BiOCl crystals with high‐performance ultraviolet photodetection Kang, Lixing; Yu, Xuechao; Zhao, Xiaoxu InfoMat, Vol. 2, Issue 3 https://doi.org/10.1002/inf2.12033	journal	August 2019
Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures Zhang, Le; Shu, Tianyu; Wu, Huizhen physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 5 https://doi.org/10.1002/pssr.201800551	journal	January 2019
Bolometric Effect in Bi ₂ O ₂ Se Photodetectors Yang, Hang; Tan, Congwei; Deng, Chuyun Small, Vol. 15, Issue 43 https://doi.org/10.1002/smll.201904482	journal	September 2019
Bi2ZnOB2O6: a polar material capable of photocatalytic degradation of Rhodamine B Liu, Jian; Zhao, Wenwu; Wang, Bo Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 16 https://doi.org/10.1007/s10854-018-9511-4	journal	June 2018
Salt-assisted chemical vapor deposition of two-dimensional materials Han, Wei; Liu, Kailang; Yang, Sanjun Science China Chemistry, Vol. 62, Issue 10 https://doi.org/10.1007/s11426-019-9525-y	journal	August 2019
Electric-field-tuned topological phase transition in ultrathin Na3Bi Collins, James L.; Tadich, Anton; Wu, Weikang Nature, Vol. 564, Issue 7736 https://doi.org/10.1038/s41586-018-0788-5	journal	December 2018
Nonequilibrium Magnetic Oscillation with Cylindrical Vector Beams Fujita, Hiroyuki; Sato, Masahiro Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-33651-0	journal	October 2018
Recent advances in ternary two-dimensional materials: synthesis, properties and applications Wang, Lina; Hu, Peng; Long, Yi Journal of Materials Chemistry A, Vol. 5, Issue 44 https://doi.org/10.1039/c7ta06971e	journal	January 2017
2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection Wang, Feng; Wang, Zhenxing; Yin, Lei Chemical Society Reviews, Vol. 47, Issue 16 https://doi.org/10.1039/c8cs00255j	journal	January 2018
Bismuth oxysulfide modified ZnO nanorod arrays as an efficient electron transport layer for inverted polymer solar cells Wu, Zuping; Yu, Huangzhong; Shi, Shengwei Journal of Materials Chemistry A, Vol. 7, Issue 24 https://doi.org/10.1039/c9ta02447f	journal	January 2019
Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In ₂ Se ₃ for Flexible Broadband Photodetectors Tang, Lei; Teng, Changjiu; Luo, Yuting Research, Vol. 2019 https://doi.org/10.34133/2019/2763704	journal	March 2019
Chemical Patterning of High-Mobility Semiconducting 2D Bi ₂ O ₂ Se Crystals for Integrated Optoelectronic Devices Wu, Jinxiong; Liu, Yujing; Tan, Zhenjun Advanced Materials, Vol. 29, Issue 44 https://doi.org/10.1002/adma.201704060	journal	October 2017
Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility Guo, Yu; Gao, Nan; Bai, Yizhen Frontiers of Physics, Vol. 13, Issue 4 https://doi.org/10.1007/s11467-018-0810-2	journal	July 2018
Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure Yang, Tao; Li, Xing; Wang, Liming Journal of Materials Science, Vol. 54, Issue 24 https://doi.org/10.1007/s10853-019-03963-1	journal	September 2019
Strong spin-orbit interaction and magnetotransport in semiconductor Bi$_2$O$_2$Se nanoplates Meng, Mengmeng; Huang, Shaoyun; Tan, Congwei arXiv https://doi.org/10.48550/arxiv.1801.00971	text	January 2018

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Title: High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se