Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration

Addamane, S. J.; Rashidi, A.; Mansoori, A.; Dawson, N. M.; Shima, D. M.; Rotter, T. J.; Wang, G. T.; Balakrishnan, G.

doi:10.1016/j.physe.2020.114376

Title: Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration

Journal Article · Tue Jul 21 00:00:00 EDT 2020 · Physica E. Low-dimensional Systems and Nanostructures

DOI:https://doi.org/10.1016/j.physe.2020.114376· OSTI ID:1650155

Addamane, S. J. ^[1]; Rashidi, A. ^[2]; Mansoori, A. ^[2]; Dawson, N. M. ^[2]; Shima, D. M. ^[2]; Rotter, T. J. ^[2]; Wang, G. T. ^[1]; Balakrishnan, G. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States)

The optical properties of InAs quantum dashes (QDashes) grown on InP and InAs quantum dots (QDots) grown on GaAs in a dashes- or dots-in-a-well (DWELL) configuration are comparatively investigated using temperature-dependent photoluminescence (PL) measurements. The trends in PL characteristics such as exciton energy, spectral bandwidth and integrated intensity with respect to temperature are found to be distinctly dissimilar between the two systems. A rate-equation model involving exciton recombination and thermal transfer in a localized-state ensemble is used to quantitively interpret the experimental data. The results of this study suggest that QDashes in this configuration exhibit PL properties more consistent with a lower degree of carrier localization compared to QDots. A preliminary structural analysis highlighting the shape/size differences between the two nanostructures is also presented.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1650155

Alternate ID(s):: OSTI ID: 1694166

Report Number(s):: SAND-2020-8151J; 689790

Journal Information:: Physica E. Low-dimensional Systems and Nanostructures, Vol. 124; ISSN 1386-9477

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration

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