Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898005· OSTI ID:22350845

Martinez, A.; Merghem, K.; Ramdane, A. ^[1]; Joshi, S.; Provost, J. -G.; Lelarge, F. ^[2]

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1. CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France)
2. III-V Lab, A Joint Laboratory of Alcatel Lucent Bell Laboratories, Thales Research and Technology and CEA-LETI, Route de Nozay, 91460 Marcoussis (France)

In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.

• OSTI ID: 22350845
• Journal Information: Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
GAIN
GHZ RANGE
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
MODULATION
P-TYPE CONDUCTORS
WAVEGUIDES