Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3583593· OSTI ID:21560190

Kong, J X; Zhu, Q S; Xu, B; Wang, Z G ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

An InAs/In{sub 0.73}Ga{sub 0.27}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.53}Al{sub 0.235}Ga{sub 0.235}As quantum dashes-in-a-step-well (QDSWELL) structure grown via molecular beam epitaxy has been studied. It is observed that the photoluminescence (PL) emission wavelength of such a structure can be as long as 2.12 {mu}m at room temperature (RT). This is the longest emission wavelength of InAs QDashes to be realized at RT. The electron and hole energy levels of the InAs/In{sub 0.73}Ga{sub 0.27}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.53}Al{sub 0.235}Ga{sub 0.235}As QDSWELL structure have been calculated using effective-mass envelope-function theory. The calculated transition energy E{sub E1-HH1} (from the first electron energy level E1 to the first heavy-hole energy level HH1) agrees with the measured PL emission peak position quite well. It is found that QDSWELL is an alternative structure for realizing lasers with wavelengths beyond 2 {mu}m at RT.

• OSTI ID: 21560190
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 8; Other Information: DOI: 10.1063/1.3583593; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
EFFECTIVE MASS
ELECTRONS
ENERGY LEVELS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASER RADIATION
MOLECULAR BEAM EPITAXY
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EMISSION
EPITAXY
FERMIONS
INDIUM COMPOUNDS
LEPTONS
LUMINESCENCE
MASS
MATERIALS
NANOSTRUCTURES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTON EMISSION
PNICTIDES
RADIATIONS
TEMPERATURE RANGE