Effect of matrix on InAs self-organized quantum dots on InP substrate
- University of California, Berkeley, California 94720 (United States)
- Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)
- A. F. Ioffe Physico-Technical Institute, 194021, Politekhnicheskaya 26, St. Petersburg (Russia)
InAs self-organized quantum dots in In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3{endash}4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 573730
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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