Group-V intermixing in InAs/InP quantum dots

Journal Article · Mon Jan 31 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1861500· OSTI ID:20636995

Chia, C K; Chua, S J; Tripathy, S; Dong, J R ^[1]

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1. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)

Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO{sub 2} and SiN{sub x} dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.

• OSTI ID: 20636995
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DIELECTRIC MATERIALS
IMPURITIES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
MEV RANGE 10-100
MEV RANGE 100-1000
PHOTOLUMINESCENCE
QUANTUM DOTS
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPECTRAL SHIFT
TEMPERATURE RANGE 0273-0400 K
VACANCIES