Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.
- OSTI ID:
- 20860920
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 13; Other Information: DOI: 10.1063/1.2357563; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing
Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
Group-V intermixing in InAs/InP quantum dots
Journal Article
·
Mon Dec 12 00:00:00 EST 2005
· Applied Physics Letters
·
OSTI ID:20860920
+3 more
Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
Journal Article
·
Fri Aug 15 00:00:00 EDT 2008
· Journal of Applied Physics
·
OSTI ID:20860920
+6 more
Group-V intermixing in InAs/InP quantum dots
Journal Article
·
Mon Jan 31 00:00:00 EST 2005
· Applied Physics Letters
·
OSTI ID:20860920
+1 more