Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing

Journal Article · Mon Dec 12 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2142330· OSTI ID:20706476

Salem, B; Aimez, V; Morris, D; Turala, A; Regreny, P; Gendry, M ^[1]

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1. Centre de Recherche en Nanofabrication et Nanocaracterisation (CRN2), Universite de Sherbrooke (Quebec) J1K 2R1 (Canada)

Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 deg. C for 120 s were used to create point defects and promote intermixing in InAs/InP quantum stick structures grown by molecular beam epitaxy. With these soft conditions for ion-implantation-induced intermixing, photoluminescence measurements at low temperature show a very large blueshift up to 350 nm and a narrow emission linewidth (down to 30 nm for ion dose equal to 5x10{sup 13} cm{sup -2}). The band gap tuning limit in this system was evaluated using implantation of phosphorus ions at various doses (1x10{sup 11}-5x10{sup 14} cm{sup -2}), at a temperature of 200 deg. C followed by rapid thermal annealing.

• OSTI ID: 20706476
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ENERGY GAP
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION IMPLANTATION
KEV RANGE 10-100
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
NANOSTRUCTURES
PHOSPHORUS IONS
PHOTOLUMINESCENCE
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TEMPERATURE RANGE 0400-1000 K