Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 {mu}m

Journal Article · Mon Dec 11 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2408631· OSTI ID:20880159

Moreau, G; Azouigui, S; Cong, D -Y; Merghem, K; Martinez, A; Patriarche, G; Ramdane, A; Lelarge, F; Rousseau, B; Dagens, B; Poingt, F; Accard, A; Pommereau, F ^[1]

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1. Laboratoire de Photonique et Nanostructure, CNRS UPR 20, Route Nozay, 91460 Marcoussis (France)

The authors report the growth of 6-, 9-, and 12-layer InAs/InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm{sup -1} is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 W/A per facet) and output power (P{sub out}=20 mW), close to those of conventional quantum well devices.

• OSTI ID: 20880159
• Journal Information: Applied Physics Letters, Vol. 89, Issue 24; Other Information: DOI: 10.1063/1.2408631; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
PERFORMANCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STIMULATED EMISSION
WAVEGUIDES