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Title: Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Journal Article · · Nature Communications
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [5];  [5];  [6];  [6]; ORCiD logo [6];  [5];  [5]; ORCiD logo [5];  [7];  [5];  [8]; ORCiD logo [9]; ORCiD logo [10]; ORCiD logo [5]
  1. Univ. of Pennsylvania, Philadelphia, PA (United States); Chinese Univ. of Hong Kong, Shatin (Hong Kong)
  2. Univ. of California, Berkeley, CA (United States)
  3. Univ. of Pennsylvania, Philadelphia, PA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Univ. of Pennsylvania, Philadelphia, PA (United States); Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong)
  5. Univ. of Pennsylvania, Philadelphia, PA (United States)
  6. Univ. Paris-Saclay Saint-Aubin, Gif sur Yvette (France)
  7. Univ. of Pennsylvania, Philadelphia, PA (United States); City Univ. of Hong Kong, Kowloon (Hong Kong)
  8. Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong)
  9. Materials Science Inst. of Madrid (ICMM) (Spain)
  10. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
+ Show Author Affiliations

The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains. The key insight is that substrate curvature can stabilize ABC domains. Controllable ABC yields ~59% were achieved by tailoring substrate curvature levels. ABC fractions remained high after transfer to device substrates, as confirmed by transport measurements revealing the expected tunable ABC band gap. Substrate topography engineering provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); German Research Council (DFG)
Grant/Contract Number:
AC52-07NA27344; AC02-05CH11231; SC0012575; NSF EFRI 2-DARE 1542707; NSF EAGER 1838456; GE2827/1-1; GE2827/2-1; DMR-1720530
OSTI ID:
1633022
Alternate ID(s):
OSTI ID: 1603611
Report Number(s):
LLNL-JRNL-802857; 1005634
Journal Information:
Nature Communications, Vol. 11, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 38 works
Citation information provided by
Web of Science

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Figures / Tables (31)

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Supplementary Figure 20(p. 34)figure Supplementary Figure 20
Supplementary Figure 21(p. 35)figure Supplementary Figure 21
Supplementary Figure 22(p. 36)figure Supplementary Figure 22
Supplementary Figure 23(p. 39)figure Supplementary Figure 23
Supplementary Figure 24(p. 40)figure Supplementary Figure 24
Supplementary Figure 25(p. 40)figure Supplementary Figure 25
Supplementary Figure 26(p. 41)figure Supplementary Figure 26

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Related Subjects

36 MATERIALS SCIENCE
Materials science
Condensed matter physics
Nanoscience
Nanotechnology
Structural properties
Synthesis of graphene
Two-dimensional materials
structural properties
synthesis of graphene
two-dimensional materials