Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry

Yan, Jiaxu; Wang, Xingli; Tay, Beng Kang; Zhou, Wu; Liu, Zheng; Shen, Ze Xiang; Xia, Juan; Liu, Lei; Kuo, Jer -Lai; Chen, Shoushun

doi:10.1021/acs.nanolett.5b03597

Stacking-dependent interlayer coupling in trilayer MoS₂ with broken inversion symmetry

Journal Article · Fri Nov 13 00:00:00 EST 2015 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b03597· OSTI ID:1265956

Yan, Jiaxu ^[1]; Wang, Xingli ^[1]; Tay, Beng Kang ^[1]; Zhou, Wu ^[2]; Liu, Zheng ^[1]; Shen, Ze Xiang ^[1]; Xia, Juan ^[1]; Liu, Lei ^[3]; Kuo, Jer -Lai ^[4]; Chen, Shoushun ^[1]

Nanyang Technological Univ. (Singapore)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Chinese Academy of Sciences, Changchun (People's Republic of China)
Academia Sinica, Taipei (Taiwan)

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS₂ samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS₂ blocks.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265956

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 15; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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