skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells

Journal Article · · Solar Energy Materials and Solar Cells

The spatial distribution of device performance parameters of solar cells provides important insight into their operation, including the type and magnitude of conversion losses and potential areas of improvement. In most of the procedures used to create these parameter images, a uniform (i.e., global) short-circuit current density (JSC) is usually assumed. However, JSC is known to vary over the surface of a solar cell, especially in polycrystalline absorber materials like multicrystalline silicon. In this work, a high speed quantum efficiency measurement rastered over the surface of a solar cell is used to obtain images of JSC. These JSC images are then used to calculate images of series resistance, dark saturation current density, fill factor, and conversion efficiency. Comparisons are made between the images created with a global JSC and with the spatially-resolved JSC. Negligible variation is observed in the series resistance and dark saturation current density images, but a drastic change is observed in the efficiency images between these two methods.

Research Organization:
Univ. of Central Florida, Orlando, FL (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008155; EE-0008155
OSTI ID:
1613500
Alternate ID(s):
OSTI ID: 1547429
Journal Information:
Solar Energy Materials and Solar Cells, Vol. 199; ISSN 0927-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (19)

Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging journal February 2007
Advanced luminescence based effective series resistance imaging of silicon solar cells journal November 2008
Evaluating luminescence based voltage images of silicon solar cells journal July 2010
Comparison of DLIT- and PL-based Local Solar Cell Efficiency Analysis journal January 2013
Improved local efficiency imaging via photoluminescence for silicon solar cells journal April 2014
Integration of spatially resolved ideality factor into local cell efficiency analysis with photoluminescence journal December 2017
Perimeter Recombination Characterization by Luminescence Imaging journal January 2016
Short-Circuit Current Density Imaging Via PL Image Evaluation Based on Implied Voltage Distribution journal March 2015
Short-circuit Current Density Imaging Methods for Silicon Solar Cells journal August 2015
Crystalline Silicon Device Loss Analysis Through Spatially Resolved Quantum Efficiency Measurements journal July 2017
Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations journal December 2016
Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence journal June 2005
The impact of voltage independent carriers on implied voltage measurements on silicon devices journal October 2016
The effect of diffusion-limited lifetime on implied current voltage curves based on photoluminescence data journal August 2007
Voltage calibration of luminescence images of silicon solar cells journal January 2014
Imaging the local ideality factor by contactless photoluminescence measurement journal July 2013
Local efficiency analysis of solar cells based on lock-in thermography journal December 2012
Fast and reliable calculation of the two-diode model without simplifications: Fast and reliable calculation of the two-diode model without simplifications journal November 2012
Superposition and Reciprocity in the Electroluminescence and Photoluminescence of Solar Cells journal April 2012

Similar Records

Recombination and Resistive Losses of Transferred Foil Contacts for Silicon Heterojunction Solar Cells
Journal Article · Tue Sep 15 00:00:00 EDT 2020 · Physica Status Solidi. Rapid Research Letters · OSTI ID:1613500

Parameter extraction from I-V characteristics of PV devices
Journal Article · Sat Jan 15 00:00:00 EST 2011 · Solar Energy · OSTI ID:1613500

Short-circuit current density imaging of crystalline silicon solar cells via lock-in thermography: Robustness and simplifications
Journal Article · Fri Nov 14 00:00:00 EST 2014 · Journal of Applied Physics · OSTI ID:1613500

Related Subjects