Recombination and Resistive Losses of Transferred Foil Contacts for Silicon Heterojunction Solar Cells

Iqbal, Nafis; Li, Mengjie; Gregory, Geoffrey; Dahal, Som; Bowden, Stuart; Davis, Kristopher O.

doi:10.1002/pssr.202000368

Title: Recombination and Resistive Losses of Transferred Foil Contacts for Silicon Heterojunction Solar Cells

Journal Article · Tue Sep 15 00:00:00 EDT 2020 · Physica Status Solidi. Rapid Research Letters

DOI:https://doi.org/10.1002/pssr.202000368· OSTI ID:1804829

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^[1]; Dahal, Som ^[2]; Bowden, Stuart ^[2];

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Department of Materials Science and Engineering University of Central Florida Orlando FL 32816 USA, Resilient Intelligent Sustainable Energy Systems Faculty Cluster University of Central Florida Orlando FL 32816 USA
School of Electrical, Computing and Energy Engineering Arizona State University Tempe AZ 85287-5706 USA
Department of Materials Science and Engineering University of Central Florida Orlando FL 32816 USA, Resilient Intelligent Sustainable Energy Systems Faculty Cluster University of Central Florida Orlando FL 32816 USA, CREOL, The College of Optics and Photonics University of Central Florida Orlando FL 32816 USA, Florida Solar Energy Center University of Central Florida Cocoa FL 32922 USA

Silicon heterojunction (SHJ) solar cells have been studied extensively due to their potential to reach high energy conversion efficiencies. However, one of the limiting factors for this technology is the metallization, which uses low‐curing‐temperature silver pastes that result in fingers with higher bulk resistivity. Herein, a simple approach to fabricate the SHJ solar cell contacts is demonstrated with commercially available low‐cost silver (Ag) electrically conductive adhesive (ECA) pastes and aluminium (Al) foils. This technique can result in a transparent conductive oxide (TCO)‐free cell structure and has the potential to combine cell metallization and interconnection. Recombination and resistive loss analyses are performed on the fabricated test samples. A dark saturation current density at the contact ( J _0c ) of 3.05 fA cm ⁻² for test samples before annealing is reported. The analysis of the experimental and simulated photoluminescence (PL) images shows negligible added recombination. The contact resistivity ( ρ _c ) value is 49.3 mΩ cm ² after annealing which can be optimized by specialized ECA pastes.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: EE-0008155

OSTI ID:: 1804829

Journal Information:: Physica Status Solidi. Rapid Research Letters, Journal Name: Physica Status Solidi. Rapid Research Letters Vol. 14 Journal Issue: 11; ISSN 1862-6254

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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