Parameter extraction from I-V characteristics of PV devices

Journal Article · Sat Jan 15 00:00:00 EST 2011 · Solar Energy

DOI:https://doi.org/10.1016/J.SOLENER.2010.11.005· OSTI ID:21401366

Macabebe, Erees Queen B ^[1]; Sheppard, Charles J ^[2]; Dyk, E Ernest van ^[3]

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1. Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines)
2. Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)
3. Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

• OSTI ID: 21401366
• Journal Information: Solar Energy, Vol. 85, Issue 1; Other Information: Elsevier Ltd. All rights reserved; ISSN 0038-092X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
COPPER SELENIDE SOLAR CELLS
ELECTRIC CONDUCTIVITY
DIAGRAMS
PHOTOVOLTAIC EFFECT
ELECTRIC CURRENTS
PERFORMANCE
SILICON
OPTIMIZATION
PARTICLES
ELECTRIC POTENTIAL
CONVERSION
EFFICIENCY
OPERATION
RECOMBINATION
COPPER SULFIDE SOLAR CELLS
INDIUM SELENIDE SOLAR CELLS
INDIUM SULFIDES
GALLIUM SELENIDES
GALLIUM SULFIDES
TEMPERATURE DEPENDENCE
Parameter extraction
Particle swarm optimization
Device parameters